Title :
Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.23 ¿m grown by low-pressure metalorganic chemical vapour deposition
Author :
Razeghi, M. ; Hirtz, J.P. ; Hirtz, P. ; Larivain, J.P. ; Bondeau, R. ; de Cremoux, B. ; Duchemin, J.P.
Author_Institution :
Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
Abstract :
We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1.23 ¿m grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 1.23 mu m; GaInAsP-InP DH diode laser; III-V semiconductors; current threshold; low-pressure metalorganic chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810420
