Title :
Single-interface enhanced mobility structures by metalorganic chemical vapour deposition
Author :
Coleman, J.J. ; Dapkus, P.D. ; Yang, J.J.J.
Author_Institution :
Rockwell International, Microelectronics Research and Development Center, Anaheim, USA
Abstract :
Enhanced mobility effects in single-interface 2-dimensional electron gas heterostructures grown by metalorganic chemical vapour deposition (MOCVD) are reported. The mobility/temperature characteristics of single-interface structures, with and without an undoped spacer to reduce coulomb scattering at the interface, are described.
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; chemical vapour deposition; gallium arsenide; p-n heterojunctions; 2-dimensional electron gas heterostructures; GaAs-GaAlAs heterostructures; III-V semiconductors; coulomb scattering; metalorganic chemical vapour deposition; single-interface enhanced mobility structures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810426
