Title :
Fast photoconductive optoelectronic broadband switch with low control voltage
Author :
MacDonald, R.I. ; Hara, E.H. ; Hum, R.H.
Author_Institution :
Communications Research Centre, Department of Communications, Ottawa, Canada
Abstract :
Optoelectronic switching with a gallium arsenide field-effect transistor used as a photoconductive detector is demonstrated. On-state to off-state isolation ratios of 65 dB from 500 kHz to 1.3 GHz, and switching times less than 10 ns, are observed. Gating voltage is of the order of 3¿10 V.
Keywords :
III-V semiconductors; field effect transistors; gallium arsenide; optoelectronic devices; photoconducting devices; semiconductor switches; 500 kHz to 1.3 GHz; GaAs FET; III-V semiconductor; low control voltage; photoconductive optoelectronic broadband switch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810429
