• DocumentCode
    972733
  • Title

    Fast photoconductive optoelectronic broadband switch with low control voltage

  • Author

    MacDonald, R.I. ; Hara, E.H. ; Hum, R.H.

  • Author_Institution
    Communications Research Centre, Department of Communications, Ottawa, Canada
  • Volume
    17
  • Issue
    17
  • fYear
    1981
  • Firstpage
    611
  • Lastpage
    612
  • Abstract
    Optoelectronic switching with a gallium arsenide field-effect transistor used as a photoconductive detector is demonstrated. On-state to off-state isolation ratios of 65 dB from 500 kHz to 1.3 GHz, and switching times less than 10 ns, are observed. Gating voltage is of the order of 3¿10 V.
  • Keywords
    III-V semiconductors; field effect transistors; gallium arsenide; optoelectronic devices; photoconducting devices; semiconductor switches; 500 kHz to 1.3 GHz; GaAs FET; III-V semiconductor; low control voltage; photoconductive optoelectronic broadband switch;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810429
  • Filename
    4245905
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972733