Title :
High current gain in monolithic hot-electron transistors
Author :
Shannon, John M. ; Gill, Akshay
Author_Institution :
Philips Research Laboratories, Redhill, UK
Abstract :
Monolithic hot-beam transistors have been made in silicon with a current gain of 20 and a MAG>20 dB. Hot electrons are injected at approximately 1.7 eV, cross a ~250 Ã… wide degenerate base and surmount a 0.4 eV collector barrier.
Keywords :
bipolar transistors; hot carriers; ion implantation; Si; bipolar transistors; current gain; elemental semiconductors; monolithic hot-electron transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810435
