• DocumentCode
    972800
  • Title

    High current gain in monolithic hot-electron transistors

  • Author

    Shannon, John M. ; Gill, Akshay

  • Author_Institution
    Philips Research Laboratories, Redhill, UK
  • Volume
    17
  • Issue
    17
  • fYear
    1981
  • Firstpage
    620
  • Lastpage
    621
  • Abstract
    Monolithic hot-beam transistors have been made in silicon with a current gain of 20 and a MAG>20 dB. Hot electrons are injected at approximately 1.7 eV, cross a ~250 Ã… wide degenerate base and surmount a 0.4 eV collector barrier.
  • Keywords
    bipolar transistors; hot carriers; ion implantation; Si; bipolar transistors; current gain; elemental semiconductors; monolithic hot-electron transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810435
  • Filename
    4245911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972800