Title :
A 2/3-in 400k-pixel sticking-free stack-CCD image sensor
Author :
Sasaki, Michio ; Ihara, Hisanori ; Matsunaga, Yoshiyuki
Author_Institution :
ULSI Res. Center, Toshiba Corp., Kawasaki, Japan
fDate :
11/1/1993 12:00:00 AM
Abstract :
A 2/3-in 400k-pixel stack-CCD image sensor overlaid with an amorphous silicon photoconversion layer has been developed with FIT architecture. The image sticking, which occurred under 10000× standard-incident light conditions, is completely suppressed to the invisible level with bias charge injection operation into the a-Si photoconversion layer. Furthermore, the fixed pattern noise (FPN) of 30 electronsp-p at 60°C has been achieved by 0.6-V biased storage diodes
Keywords :
CCD image sensors; charge storage diodes; semiconductor device noise; 0.6 V; 0.66 in; 400 kpixel; 60 C; FIT architecture; Si; a-Si photoconversion layer; bias charge injection operation; biased storage diodes; fixed pattern noise; image sticking suppression; sticking-free stack-CCD image sensor; Amorphous silicon; Charge coupled devices; Charge-coupled image sensors; Diodes; Electrodes; Electrons; Equivalent circuits; Image sensors; Image storage; Registers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
