Title :
Improved performance of 4K SRAM by means of CW laser annealing
Author :
Teng, T.C. ; Shiau, Y. ; de Ornellas, S. ; Readdie, J. ; Wong, Elaine ; Chang, Gee-Kung ; Ko, Sungyeon ; Skinner, C.
Author_Institution :
National Semiconductor, Santa Clara, USA
Abstract :
A 4K × 1 NMOS static RAM (MM2147) has been successfully fabricated by means of CW laser annealing. The access time was reduced by 10 ns compared with a thermally annealed control with no increase in power dissipation. This report demonstrates the feasibiligy of using CW laser annealing as a potential VLSI process technology.
Keywords :
field effect integrated circuits; integrated memory circuits; large scale integration; laser beam annealing; random-access storage; 4K*1 NMOS static RAM; CW laser annealing; VLSI process technology; access time; thermally annealed control;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810440
