• DocumentCode
    972893
  • Title

    Efficient p-type Si IMPATT diodes for V-band frequencies

  • Author

    Leistner, D.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Mÿnchen, West Germany
  • Volume
    17
  • Issue
    18
  • fYear
    1981
  • Firstpage
    635
  • Lastpage
    636
  • Abstract
    p-type single-drift IMPATT diodes for V-band frequencies were fabricated by a single diffusion process. The diodes were packaged on a copper heatsink using quartz standoffs and investigated in a resonant cap waveguide structure. The maximum CW output power is 0.5 at 68 GHz with an efficiency of 8.7%
  • Keywords
    IMPATT diodes; elemental semiconductors; silicon; Cu heat sink; V-band frequencies; elemental semiconductors; p-type Si IMPATT diodes; quartz standoffs; resonant cap waveguide structure; single diffusion process;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810445
  • Filename
    4245922
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972893