Title :
Continuous model for gate-induced charge in short-channel MOSFETs
Author_Institution :
Institute of Microwave Technology, Stockholm, Sweden
Abstract :
The threshold voltage in a short-channel MOS transistor is a sensitive function of the effective channel length, substrate bias and the channel impurity profile. A continuous model is developed in this letter to obtain a simple analytical expression for the above described sensitivities suitable for CAD program implementation. The calculated values for the threshold voltage are compared with the measurements on MOSFETs with effective channel lengths between 9.7 ¿m and 1.2 ¿m.
Keywords :
circuit CAD; insulated gate field effect transistors; semiconductor device models; CAD program implementation; channel impurity profile; continuous model; effective channel length; gate-induced charge; short-channel MOSFET; substrate bias; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810446
