• DocumentCode
    972938
  • Title

    High-voltage buried-channel MOS fabricated by oxygen implantation into silicon

  • Author

    Akiya, M. ; Ohwada, Kazunari ; Nakashima, S.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    18
  • fYear
    1981
  • Firstpage
    640
  • Lastpage
    641
  • Abstract
    A high-voltage offset-gate buried-channel MOS made on a SOS-like substrate is described. An isolation layer is formed by an oxygen implantation process called SIMOX. A 410 V buried SiO2 breakdown voltage and a 180 V drain breakdown voltage are obtained.
  • Keywords
    field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; ion implantation; HV buried channel MOSFET; MOS IC; SOS-like substrate; Si:O; SiO2; drain breakdown voltage; isolation layer; separation by unplanted oxygen (SIMOX) technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810449
  • Filename
    4245926
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972938