Title :
UHF band high-efficiency linear power amplifier for mobile communication satellites
Author :
Sekine, K. ; Dooi, Y. ; Iso, A. ; Funaki, H. ; Takei, I.
Author_Institution :
Space Commun. Res. Corp., Tokyo, Japan
fDate :
3/29/1990 12:00:00 AM
Abstract :
A linear MOSFET power amplifier with high efficiency and low intermodulation distortion is developed by using the harmonic control and gate bias optimising technique. An output power of 30 W at 1 dB gain compression and added efficiency of 52% are attained at an operating frequency of 835 MHz.
Keywords :
elemental semiconductors; field effect transistor circuits; power amplifiers; radio transmitters; satellite links; silicon; ultra-high-frequency amplifiers; 30 W; 52 percent; 835 Hz; MOSFET power amplifier; Si; UHF band; added efficiency; gain compression; gate bias optimising technique; harmonic control; high-efficiency linear power amplifier; low intermodulation distortion; mobile communication satellites; operating frequency; output power; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900286
