Title :
InGaAsP/InP BH lasers on p-type InP substrates
Author :
Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Nagai, Hiroto ; Nawata, Koji ; Tokunaga, M.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A 1.55 ¿m InGaAsP/InP BH laser is achieved on a p-type InP substrate resulting in a simple fabrication process. A threshold current as low as 40 mA under CW operation and a pulsed power rating of several hundred mW at 8 A peak current are achieved in buried-heterostructure lasers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; CW operation; III-V semiconductors; InGaAsP-InP buried-heterostructure lasers; p-type InP substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810453
