DocumentCode :
973052
Title :
Submicrometer Comb-Drive Actuators Fabricated on Thin Single Crystalline Silicon Layer
Author :
Takahashi, Kazunori ; Bulgan, Erdal ; Kanamori, Yoshiaki ; Hane, Kazuhiro
Author_Institution :
Dept. of Nanomech., Tohoku Univ., Sendai
Volume :
56
Issue :
4
fYear :
2009
fDate :
4/1/2009 12:00:00 AM
Firstpage :
991
Lastpage :
995
Abstract :
Electrostatic comb-drive microactuators were fabricated by electron beam lithography on a 260-nm-thick silicon layer of a silicon-on-insulator wafer. The actuators consisted of comb electrodes, springs, and a frame. Two kinds of microactuators with doubly clamped and double-folded springs were designed and fabricated. The comb electrode was as small as 2.5 mum wide and 8 mum long and was composed of 250-nm-wide, 260-nm-thick, and 2-mum-long fingers. The air gap between the fingers was 350 nm. The spring was 250 nm wide, 260 nm thick, and 17.5 mum long, and the spring constant was 0.11 N/m. The force and displacement generated by the microactuator were 2.3 x 10-7N and 1.0 mum, respectively. Applying an ac voltage, the oscillation amplitude became maximum at a frequency of 132 kHz. The mechanical and electrical characteristics of the fabricated actuators were investigated quantitatively.
Keywords :
electron beam lithography; elemental semiconductors; microactuators; silicon; silicon-on-insulator; Si; comb electrode; electron beam lithography; electrostatic comb-drive microactuator; frequency 132 kHz; silicon-on-insulator wafer; size 1.0 mum; size 17.5 mum; size 2 mum; size 2.5 mum; size 250 nm; size 260 nm; size 8 mum; submicrometer comb-drive actuator; thin single crystalline silicon layer; Actuators; microelectromechanical devices; micromachining;
fLanguage :
English
Journal_Title :
Industrial Electronics, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0046
Type :
jour
DOI :
10.1109/TIE.2008.2006934
Filename :
4663701
Link To Document :
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