DocumentCode :
973057
Title :
Analysis of the charge transfer of models for electrostatic discharge (ESD) and semiconductor devices
Author :
Greason, William D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Western Ontario, London, Ont., Canada
Volume :
32
Issue :
3
fYear :
1996
Firstpage :
726
Lastpage :
734
Abstract :
Various models are used to simulate the electrostatic discharge (ESD) event associated with semiconductor devices; these include the human body model (HBM), the charged device model (CDM), and the field induced charged device model (FCDM). Maxwell´s method is used to analyze these models to determine device potentials and the transfer of charge during typical discharges; existing test methods are also examined. A charge injection test method is introduced which provides control of the charge transferred to the device under test; it is proposed as a means to study charge related phenomena due to ESD
Keywords :
electrostatic discharge; semiconductor devices; ESD; Maxwell´s method; charge injection test method; charge related phenomena; charge transfer; charged device model; electrostatic discharge; field induced charged device model; human body model; semiconductor devices; Biological system modeling; Capacitance; Charge transfer; Conductors; Electrostatic analysis; Electrostatic discharge; Humans; Maxwell equations; Semiconductor devices; Testing;
fLanguage :
English
Journal_Title :
Industry Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-9994
Type :
jour
DOI :
10.1109/28.502188
Filename :
502188
Link To Document :
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