Title :
Analysis of the charge transfer of models for electrostatic discharge (ESD) and semiconductor devices
Author :
Greason, William D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Western Ontario, London, Ont., Canada
Abstract :
Various models are used to simulate the electrostatic discharge (ESD) event associated with semiconductor devices; these include the human body model (HBM), the charged device model (CDM), and the field induced charged device model (FCDM). Maxwell´s method is used to analyze these models to determine device potentials and the transfer of charge during typical discharges; existing test methods are also examined. A charge injection test method is introduced which provides control of the charge transferred to the device under test; it is proposed as a means to study charge related phenomena due to ESD
Keywords :
electrostatic discharge; semiconductor devices; ESD; Maxwell´s method; charge injection test method; charge related phenomena; charge transfer; charged device model; electrostatic discharge; field induced charged device model; human body model; semiconductor devices; Biological system modeling; Capacitance; Charge transfer; Conductors; Electrostatic analysis; Electrostatic discharge; Humans; Maxwell equations; Semiconductor devices; Testing;
Journal_Title :
Industry Applications, IEEE Transactions on