• DocumentCode
    973248
  • Title

    Deep hole traps in VPE p-type InP

  • Author

    Inuishi, M. ; Wessels, B.W.

  • Author_Institution
    Northwestern University, Materials Science & Engineering & Materials Research Center, Evanston, USA
  • Volume
    17
  • Issue
    19
  • fYear
    1981
  • Firstpage
    685
  • Lastpage
    686
  • Abstract
    Deep hole traps were investigated in vapour phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0.09, 0.22, 0.29, 0.41 and 0.50 eV in Al-InP Schottky barriers and p-n+ junctions. Trap concentrations ranged from 1013 to 1014 cm¿3.
  • Keywords
    III-V semiconductors; deep level transient spectroscopy; hole traps; indium compounds; semiconductor epitaxial layers; vapour phase epitaxial growth; Al-InP Schottky barriers; III-V semiconductor; InP; VPE; activation energy; deep hole traps; p-n+ junctions; transient capacitance spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810479
  • Filename
    4245957
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973248