Title :
Deep hole traps in VPE p-type InP
Author :
Inuishi, M. ; Wessels, B.W.
Author_Institution :
Northwestern University, Materials Science & Engineering & Materials Research Center, Evanston, USA
Abstract :
Deep hole traps were investigated in vapour phase epitaxial p-type InP by transient capacitance spectroscopy. A total of five hole traps were observed with activation energies of 0.09, 0.22, 0.29, 0.41 and 0.50 eV in Al-InP Schottky barriers and p-n+ junctions. Trap concentrations ranged from 1013 to 1014 cm¿3.
Keywords :
III-V semiconductors; deep level transient spectroscopy; hole traps; indium compounds; semiconductor epitaxial layers; vapour phase epitaxial growth; Al-InP Schottky barriers; III-V semiconductor; InP; VPE; activation energy; deep hole traps; p-n+ junctions; transient capacitance spectroscopy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810479
