Title :
Novel low temperature RF plasma annealing using NH3-N2 gas mixture
Author :
Aite, K. ; Ragay, F.W. ; Middelhoek, J.
Author_Institution :
IC Technol. & Electron. Lab., Twente Univ., Enschede, Netherlands
fDate :
5/24/1990 12:00:00 AM
Abstract :
A novel low temperature (350 degrees C) RF plasma technique using a NH3-N2 gas mixture was used to anneal bipolar structures. Vertical p-n-p transistors made with high energy ion implantation and possessing poor electrical characteristics have been dramatically improved after 30 min annealing with this new technique. The value of the ideality factor of the base current which was about 1.4 before annealing approached the ideal value of 1.0 after 30 min annealing.
Keywords :
annealing; bipolar transistors; semiconductor technology; 30 min; 350 degC; N; NH 3-N 2 gas mixture; RF plasma annealing; bipolar structures; high energy; implantation; low temperature; semiconductor device processing; vertical p-n-p transistors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900478
