• DocumentCode
    973550
  • Title

    Mn as a p-type dopant in In0.53Ga0.47As on InP substrates

  • Author

    Chand, N. ; Houston, P.A. ; Robson, P.N.

  • Author_Institution
    University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
  • Volume
    17
  • Issue
    20
  • fYear
    1981
  • Firstpage
    726
  • Lastpage
    727
  • Abstract
    Mn has been used as a p-type dopant in LPE In0.53Ga0.47As. The distribution coefficient was measured as 0.6 and the activation energy was 52.5±2.5 meV. The room temperature mobility varied from 183 to 94 cm2 V¿1s¿1 in the concentration range studied. A solid to solid diffusion coefficient of 2.6×10¿12 cm2 s¿1 was estimated for Mn into the substrate at 640°C.
  • Keywords
    III-V semiconductors; carrier mobility; diffusion in solids; doping profiles; gallium arsenide; indium compounds; manganese; semiconductor doping; In0.53Ga0.47As; InP substrates; LPE; Mn dopant; activation energy; distribution coefficient; p-type dopant; room temperature mobility; semiconductor; solid to solid diffusion coefficient;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810510
  • Filename
    4245989
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973550