DocumentCode
973599
Title
Photocurrent saturation in short-period superlattice modulators
Author
Goossen, K.W. ; Zucker, J.E. ; Jospeh, I.-Bar ; Kuo, J.M. ; Kopf, R.M. ; Miller, David A. B. ; Chemla
Author_Institution
AT & T Bell Labs., Holmdel, NJ, USA
Volume
26
Issue
11
fYear
1990
fDate
5/24/1990 12:00:00 AM
Firstpage
736
Lastpage
737
Abstract
The effects of high intensity illumination on short-period superlattice modulators at room temperature are examined using photocurrent techniques. The authors; measurements indicate a zero bias saturation intensity of 6.5 kW/cm2, considerably higher than in conventional quantum well structures with thick approximately 100 AA barriers, but lower for quantum wells with thin barriers. For moderate DC bias the change in photocurrent with applied voltage remains high even at high intensity. This implies that superlattices are useful as high-intensity optical modulators.
Keywords
electro-optical devices; optical modulation; photoconductivity; semiconductor superlattices; DC bias; applied voltage; high intensity illumination; high-intensity optical modulators; photocurrent saturation; room temperature; short-period superlattice modulators; zero bias saturation intensity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900480
Filename
106049
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