GaAs power MESFETs prepared by metalorganic chemical vapour deposition

GaAs power MESFETs have been developed by using MOCVD wafers. The saturation current of 7.2 mm-wide MESFET chips fabricated on a 6 cm2 wafer has been found to have a standard deviation of 6.8%, which is nearly a half of that observed for MESFETs fabricated on a conventional VPE wafer of the same size. The two-chip device with a gate width of 14.4 mm delivered 4 W at 7.8 GHz with 3 dB gain. The output power of 4 W at 7.8 GHz is the state-of-the-art performance of the GaAs power MESFETs prepared by the MOCVD technique.