Title :
GaAs power MESFETs prepared by metalorganic chemical vapour deposition
Author :
Shino, T. ; Yanagawa, S. ; Yamada, Y. ; Arai, K. ; Kamei, K. ; Chigira, T. ; Nakanisi, T.
Author_Institution :
Toshiba Corporation, Electronics Equipment Division, Kawasaki, Japan
Abstract :
GaAs power MESFETs have been developed by using MOCVD wafers. The saturation current of 7.2 mm-wide MESFET chips fabricated on a 6 cm2 wafer has been found to have a standard deviation of 6.8%, which is nearly a half of that observed for MESFETs fabricated on a conventional VPE wafer of the same size. The two-chip device with a gate width of 14.4 mm delivered 4 W at 7.8 GHz with 3 dB gain. The output power of 4 W at 7.8 GHz is the state-of-the-art performance of the GaAs power MESFETs prepared by the MOCVD technique.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; chemical vapour deposition; gallium arsenide; power transistors; semiconductor growth; solid-state microwave devices; 4 W output power; 7.8 GHz; GaAs power MESFETs; MOCVD wafers; metalorganic chemical vapour deposition; output power; saturation current; two-chip device;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810519
