DocumentCode :
973686
Title :
Bistable operation of semiconductor lasers by optical injection
Author :
Kawaguchi, Hitoshi
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume :
17
Issue :
20
fYear :
1981
Firstpage :
741
Lastpage :
742
Abstract :
Bistable operation in InP/InGaAsP DH lasers by optical injection is reported for the first time. An incident optical beam, generated by a conventional DH semiconductor laser, was injected into the semiconductor laser with inhomogeneous excitation. Bistability has been achieved in the relation between input intensity of the incident beam and the optical output intensity of the inhomogeneously excited laser. The bistable laser also acts as an optical limiter, i.e. the optical output completely saturates above the laser threshold level.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InP-InGaAsP DH lasers; bistable laser; bistable operation; incident optical beam; inhomogeneous excitation; input intensity; optical injection; optical limiter; optical output intensity; semiconductor lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810521
Filename :
4246000
Link To Document :
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