• DocumentCode
    973762
  • Title

    Amorphisation and low temperature recrystallisation of InP

  • Author

    Wrick, V.L. ; Choyke, W.J. ; Tzeng, C.F.

  • Author_Institution
    Westinghouse Research & Development Center, Pittsburgh, USA
  • Volume
    17
  • Issue
    20
  • fYear
    1981
  • Firstpage
    752
  • Lastpage
    754
  • Abstract
    Fe-doped semi-insulating samples of InP have been implanted at room temperature and liquid nitrogen temperature at 200 KV with phosphorous. A fluence of 5 × 1014/cm2 was sufficient to render the lattice amorphous as determined by Rutherford backscattering techniques. Successful reconstruction of the damaged lattice was achieved using a 400°C anneal for 24 h on samples implanted at liquid nitrogen temperatures.
  • Keywords
    III-V semiconductors; amorphisation; amorphous semiconductors; annealing; indium compounds; ion implantation; recrystallisation; Fe doped; InP; P implantation; Rutherford backscattering techniques; amorphisation; annealing; ion implantation; low temperature recrystallisation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810529
  • Filename
    4246008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973762