Title :
Flat doping profile double-drift silicon IMPATT for reliable CW high-power high-efficiency generation in the 94-GHz window
Author :
Dalle, Christophe ; Rolland, P.-A. ; Lleti, Georges
Author_Institution :
Centre Hyperfrequences et Semicond., Univ. des Sci. et Tech. Lille Flandres Artois, France
fDate :
1/1/1990 12:00:00 AM
Abstract :
The main results of a theoretical and experimental study of the optimization of flat doping profile double-drift silicon IMPATT diodes for the realization of reliable CW high-power high-efficiency solid-state oscillators operating in the 94 GHz atmospheric propagation window are presented. This study has been carried out by means of an IMPATT oscillator model which takes into account the thermal limitation, bias effect, and diode impedance matching. It relies on an accurate p-n junction device drift-diffusion model that includes the heavily doped regions of the collectors. This model has been used to quantify the influence of the various parameters determining the oscillator RF output performance. An explanation of the interesting noise performance of these millimeter-wave IMPATT diodes is proposed
Keywords :
IMPATT diodes; doping profiles; elemental semiconductors; microwave generation; microwave oscillators; semiconductor device models; silicon; 94 GHz; CW high-power high-efficiency solid-state oscillators; IMPATT oscillator model; MM-wave IMPATT diodes; Si diode; atmospheric propagation window; bias effect; collector heavily doped regions; diode impedance matching; flat doping profile double-drift silicon IMPATT diodes; noise performance; oscillator RF output performance; p-n junction device drift-diffusion model; thermal limitation; Atmospheric modeling; Diodes; Doping profiles; Impedance matching; Oscillators; P-n junctions; Reliability theory; Semiconductor process modeling; Silicon; Solid state circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
