Title :
Effects of heat treatment on noise spectrum in Au-InP Schottky barriers
Author :
Peransin, J.M. ; Mesbah, M. ; Groubert, E.
Author_Institution :
Université des Sciences et Techniques du Languedoc, Centre d´Ã\x89tudes d´Electronique des Solides, Laboratoire associé au CNRS, Montpellier, France
Abstract :
Measurements are reported on low frequency noise in Au-InP Schottky diodes after heating cycles. An 1/f noise component was dominant in annealing time range before 80 min. Observation of G-R noise spectra are achieved for long-term operations. Noise measurements between 77 K and 300 K have given the time constants and the activation energies of five trapping levels. The G-R processes are attributed to traps due to gold contamination in the depletion region.
Keywords :
Schottky-barrier diodes; annealing; electron device noise; gold; indium compounds; random noise; 1/f noise; 77 to 300K; Au contamination; Au-InP Schottky barriers; G-R noise spectra; Schottky diodes; activation energies; annealing; depletion region; heat treatment effects; low frequency noise; noise spectrum; time constants; trapping levels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810532
