• DocumentCode
    973789
  • Title

    Effects of heat treatment on noise spectrum in Au-InP Schottky barriers

  • Author

    Peransin, J.M. ; Mesbah, M. ; Groubert, E.

  • Author_Institution
    Université des Sciences et Techniques du Languedoc, Centre d´Ã\x89tudes d´Electronique des Solides, Laboratoire associé au CNRS, Montpellier, France
  • Volume
    17
  • Issue
    20
  • fYear
    1981
  • Firstpage
    757
  • Lastpage
    758
  • Abstract
    Measurements are reported on low frequency noise in Au-InP Schottky diodes after heating cycles. An 1/f noise component was dominant in annealing time range before 80 min. Observation of G-R noise spectra are achieved for long-term operations. Noise measurements between 77 K and 300 K have given the time constants and the activation energies of five trapping levels. The G-R processes are attributed to traps due to gold contamination in the depletion region.
  • Keywords
    Schottky-barrier diodes; annealing; electron device noise; gold; indium compounds; random noise; 1/f noise; 77 to 300K; Au contamination; Au-InP Schottky barriers; G-R noise spectra; Schottky diodes; activation energies; annealing; depletion region; heat treatment effects; low frequency noise; noise spectrum; time constants; trapping levels;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810532
  • Filename
    4246011
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973789