Title :
An accurate model of subbreakdown due to band-to-band tunneling and some applications
Author :
Endoh, Tetsuo ; Shirota, Riichiroh ; Momodomi, Masaki ; Masuoka, Fujio
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
1/1/1990 12:00:00 AM
Abstract :
An accurate model and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET is described. Results calculated by means of this model agree well with experimental results. This model provides a good understanding of the subbreakdown phenomenon. Furthermore, it shows how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current
Keywords :
insulated gate field effect transistors; semiconductor device models; tunnelling; accurate model; band-to-band tunneling; drain region; impurity density distribution design; numerical analysis; subbreakdown current; subbreakdown phenomenon; thin-gate-oxide n-MOSFET; Breakdown voltage; Electric breakdown; Impurities; Leakage current; MOS devices; MOSFET circuits; Nonvolatile memory; Random access memory; Silicon; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
