A low noise, phase linear distributed coplanar waveguide amplifier

Author

Minot, K. ; Nelson, B. ; Jones, W.

Author_Institution

Electron. Syst. Group, TRW Inc., Redondo Beach, CA, USA

Volume

41

Issue

9

fYear

1993

fDate

9/1/1993 12:00:00 AM

Firstpage

1650

Lastpage

1653

Abstract

Details of the design, fabrication, and measured data for an InGaAs high electron mobility transistor (HEMT) decade-bandwidth distributed coplanar waveguide (CPW) amplifier are presented. Comparison to a similar microstrip design is made. The design methodology highlights described here include CPW transmission line loss modeling. The circuit features the best reported CPW distributed amplifier noise figure and phase performance over 2-20 GHz as well as an on-chip bias network and low dc power consumption. The minimum measured noise figure is 2.1 dB with 11 dB maximum gain. The measured phase linearity is less than ±50 over 2-20 GHz which makes this circuit well suited for system phased array applications where phase matching and linearity are a primary concern

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; linear integrated circuits; microstrip components; microwave amplifiers; semiconductor device noise; 11 dB; 2 to 20 GHz; 2.1 dB; CPW; HEMT; InGaAs; LNA; MMIC; SHF; amplifier noise figure; decade-bandwidth; design methodology; distributed coplanar waveguide; fabrication; high electron mobility transistor; low DC power consumption; low noise amplifier; on-chip bias network; phase linear; phase performance; phased array applications; transmission line loss modeling; Circuits; Coplanar waveguides; Distributed amplifiers; HEMTs; Linearity; Low-noise amplifiers; Noise figure; Phase noise; Phased arrays; Transmission line measurements;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.245695

Filename

245695