Title :
High power output InGaAsP/InP buried heterostructure lasers
Author :
Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Suzuki, Yuya ; Nagai, Hiroto ; Nawata, Koji
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A novel InGaAsP/InP buried heterostructure (BH) laser was fabricated on a p-InP substrate. This laser can provide a peak pulse output of 0.8 W per facet with a stable lateral transverse mode oscillation and enables the fault location measurement of a single mode fibre cable over 20 km.
Keywords :
III-V semiconductors; fault location; gallium arsenide; indium compounds; optical communication equipment; semiconductor junction lasers; InGaAsP/InP buried heterostructure lasers; fault location measurement; optical communications; semiconductor lasers; stable lateral transverse mode oscillation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810548
