Title :
Thermo-optical modulation at /spl lambda/=1.5 μm in an /spl alpha/-SiC-/spl alpha/-Si-/spl alpha/-SiC planar guided-wave structure
Author :
Cocorullo, G. ; Della Corte, F.G. ; Rendina, I. ; Rubino, A. ; Terzini, E.
Author_Institution :
CNR, Naples, Italy
fDate :
7/1/1996 12:00:00 AM
Abstract :
A planar waveguide based on an amorphous silicon-amorphous silicon carbide heterostructure is proposed for the realization of passive and active optical components at the wavelengths /spl lambda/=1.3-1.5 μm. The waveguide has been realized by low temperature plasma enhanced chemical vapor deposition and is compatible with the standard microelectronic technologies. Thermo-optical induced modulation at /spl lambda/=1.5 μm is demonstrated in this waveguide. Numerical simulations predict that operation frequencies of about 3 MHz are possible. The measurements have also allowed the determination of the previously unknown thermo-optical coefficient of undoped amorphous silicon at this wavelength.
Keywords :
amorphous semiconductors; elemental semiconductors; optical modulation; optical planar waveguides; plasma CVD coatings; silicon; silicon compounds; thermo-optical effects; /spl alpha/-SiC-/spl alpha/-Si-/spl alpha/-SiC planar guided-wave structure; 1.5 micron; 3 MHz; SiC-Si-SiC; active optical components; amorphous silicon-amorphous silicon carbide heterostructure; low temperature plasma enhanced chemical vapor deposition; microelectronic technology; numerical simulation; passive optical components; planar waveguide; thermo-optical modulation; Amorphous materials; Optical devices; Optical planar waveguides; Optical waveguide components; Optical waveguides; Planar waveguides; Plasma chemistry; Plasma measurements; Plasma temperature; Silicon carbide;
Journal_Title :
Photonics Technology Letters, IEEE
