• DocumentCode
    973991
  • Title

    Formation of Junction Structures by Solid-State Diffusion

  • Author

    Smits, F.M.

  • Author_Institution
    Bell Telephone Labs., Inc., Murray Hill N.J.
  • Volume
    46
  • Issue
    6
  • fYear
    1958
  • fDate
    6/1/1958 12:00:00 AM
  • Firstpage
    1049
  • Lastpage
    1061
  • Abstract
    The diffusion of group III and group V impurities into germanium and silicon is reviewed. Observed and possible variations of the diffusion coefficient with concentration are discussed, followed by a summary of the diffusion coefficients and of solutions to the diffusion equation. Finally, methods for the evaluation of diffused layers and diffusion techniques are described.
  • Keywords
    Diffusion processes; Electrodes; Equations; Gallium arsenide; Germanium; Indium phosphide; Length measurement; P-n junctions; Silicon; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1958.286843
  • Filename
    4065444
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973991