Title :
Groove GaInAsP laser on semi-insulating InP
Author :
Yu, K.L. ; Koren, U. ; Chen, Tiffani R. ; Chen, P.C. ; Yariv, Amnon
Author_Institution :
California Institute of Technology, Pasadena, USA
Abstract :
A new GaInAsP/InP injection laser was fabricated on semi-insulating substrates. The structure utilises a single LPE growth process on a grooved substrate to form an index guided device. Current confinement was obtained by the semi-insulating InP surrounding the GaInAsP active layer. Threshold current as low as 28 mA with 250 ¿m cavity length was obtained. The light/current characteristic was linear up to five times Ith. A single longitudinal mode at 1.20 ¿m up to 1.3 Ith was observed.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; liquid phase epitaxial growth; semiconductor junction lasers; GaInAsP-InP injection laser; LPE growth process; groove laser diode; grooved substrate; index guided device; light-current characteristic; longitudinal mode; semi-insulating substrates; semiconductor lasers; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810553
