DocumentCode
974048
Title
External grating tunable MQW laser with wide tuning range of 240 nm
Author
Tabuchi, H. ; Ishikawa, H.
Author_Institution
Fujitsu Labs., Atsugi, Japan
Volume
26
Issue
11
fYear
1990
fDate
5/24/1990 12:00:00 AM
Firstpage
742
Lastpage
743
Abstract
A very wide tuning range in an external grating tunable InGaAs-InGaAsP MQW laser is demonstrated. Second subband recombination occurs in MQW diode at high current density injection. This contributes to gain expansion and a tuning range of 240 nm was obtained when operated continuously (CW) at room temperature.
Keywords
III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; indium compounds; laser tuning; semiconductor junction lasers; CW operation; InGaAs-InGaAsP; external grating; gain expansion; high current density injection; room temperature; second subband recombination; semiconductor lasers; tunable MQW laser; wide tuning range;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900484
Filename
106053
Link To Document