DocumentCode
974064
Title
Application of feedback techniques to the realisation of hybrid and monolithic broadband low-noise-and-power GaAs FET amplifiers
Author
Pengelly, R.S.
Author_Institution
Plessey Research (Caswell) Ltd., Towcester, UK
Volume
17
Issue
21
fYear
1981
Firstpage
798
Lastpage
799
Abstract
The implementation of ultrabroadband low-noise GaAs FET amplifiers operating up to 20 GHz is shown to be possible with the use of a low-parasitic high-gm device, which can only be implemented using monolithic circuit techniques. An example of a 0.1 to 6 GHz hybrid low-noise amplifier to illustrate the circuit technique is described.
Keywords
III-V semiconductors; feedback; field effect integrated circuits; gallium arsenide; hybrid integrated circuits; microwave amplifiers; microwave integrated circuits; power amplifiers; wideband amplifiers; 0.1 to 6 GHz; 20 GHz; feedback techniques; high-maximum gain low-parasitic amplifier; hybrid devices; hybrid low-noise amplifier; microwave amplifier; monolithic amplifier; power amplifier; ultrabroadband low-noise GaAs FET amplifiers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810558
Filename
4246038
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