Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

Author

Haeffner, T.D. ; Loveless, T.D. ; Zhang, E.X. ; Sternberg, A.L. ; Jagannathan, Sarangapani ; Schrimpf, R.D. ; Kauppila, J.S. ; Alles, Michael L. ; Fleetwood, D.M. ; Massengill, Lloyd W. ; Haddad, Nadim F.

Author_Institution

Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN, USA

Volume

61

Issue

6

fYear

2014

fDate

Dec. 2014

Firstpage

3037

Lastpage

3042

Abstract

The impacts of total ionizing dose (TID), temperature and RF stress on the DC and RF performance of a commercial 32 nm RF silicon-on-insulator CMOS technology are presented. Temperature dependence is the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design.

Keywords

CMOS integrated circuits; leakage currents; radiation hardening (electronics); radiofrequency integrated circuits; silicon-on-insulator; DC performance; RF SOI CMOS process; RF performance; RF silicon-on-insulator CMOS process; RF stress; TID; irradiation effects; low-power RF design; off-state leakage current; size 32 nm; size 45 nm; temperature dependence; temperature effects; temperature response; total ionizing dose; CMOS process; Degradation; Radiation effects; Radio frequency; Silicon-on-insulator; Temperature measurement; CMOS; radiation effects; s-parameters; silicon-on-insulator (SOI); total ionizing dose (TID);

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2014.2360455

Filename

6935032