Title :
SOI Schottky barrier tunnelling transistors fabricated with spacer technology
Author :
Sun, L. ; Liu, X.Y. ; Hou, D.Q. ; Han, R.Q.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
fDate :
4/15/2004 12:00:00 AM
Abstract :
Schottky barrier tunnelling transistors with gate length of 70 nm have been fabricated using spacer technology. The silicon on insulator (SOI) structure has been used to replace the silicon substrate. The thermal emission leakage current is reduced owing to decrease of the area of the source/drain Schottky contact.
Keywords :
Schottky barriers; Schottky gate field effect transistors; elemental semiconductors; leakage currents; silicon; silicon-on-insulator; tunnel transistors; 70 nm; SOI Schottky barrier tunnelling transistors; Si; silicon on insulator structure; silicon substrate; source/drain Schottky contact; spacer technology; thermal emission leakage current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20040312
