Title :
Low-dose Si ion implantation into semi-insulating LEC GaAs
Author :
Yamazaki, Hiroshi ; Honda, Taiki ; Miyazawa, Shintaro
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Electrical properties of low-dose (1012¿1013 cm¿2) Si ion implanted n-layers in lightly Cr-doped and undoped semi-insulating GaAs were evaluated by taking into consideration the surface depletion The activation efficiency and residual acceptor-like impurity concentration of implanted layers were investigated.
Keywords :
III-V semiconductors; gallium arsenide; ion implantation; semiconductor doping; silicon; Cr-doped semi-insulating GaAs; activation efficiency; low-dose Si ion implantation; residual acceptor-like impurity concentration; semi-insulating LEC GaAs; semiconductor; undoped semi-insulating GaAs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810570
