• DocumentCode
    974187
  • Title

    An improved approximation for the electron emission integral

  • Author

    Atti, Muhammad Taher Abuelma

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Bahrain Univ., Isa Town, Bahrain
  • Volume
    37
  • Issue
    1
  • fYear
    1990
  • fDate
    1/1/1990 12:00:00 AM
  • Firstpage
    299
  • Lastpage
    300
  • Abstract
    An approximation for the electron emission integral that is more accurate than previously published approximations is presented. The error in the new approximation is contained within 4.5% over the physical range of interest. The approximation can be easily implemented in computer-aided design and analysis as well as hand calculations using pocket calculators
  • Keywords
    circuit CAD; electron field emission; insulated gate field effect transistors; computer-aided design; electron emission integral; hand calculations; pocket calculators; Annealing; Cities and towns; Electron emission; Gallium arsenide; Instruction sets; Integral equations; Ion implantation; MESFETs; MOSFET circuits; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43830
  • Filename
    43830
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974187