Title :
1.3 ¿m InP/InGaAsP planar avalanche photodiodes
Author :
Shirai, Tokimasa ; Osaka, F. ; Yamasaki, Shintaro ; Nakajima, Kensuke ; Kaneda, Tadahiro
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
An InP/InGaAsP planar avalanche photodiode operating at a wavelength of 1.3 ¿m has been fabricated by using Be implantation and a difference of impurity concentrations between two n-InP epitaxial layers. A sufficient guard ring effect is demonstrated by a photoresponse, and an avalanche gain of 110 is obtained at an initial photocurrent of 0.35 ¿A.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; 1.3 micron wavelength; Be implantation; III-V semiconductor; InP/InGaAsP planar avalanche photodiode; guard ring effect; impurity concentrations; n-InP epitaxial layers; photocurrent; photoresponse;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810575
