DocumentCode :
974308
Title :
Temperature dependence of peak heights in deep-level transient spectroscopy
Author :
Rockett, P.I. ; Peaker, A.R.
Author_Institution :
University of Manchester Institute of Science & Technology, Department of Electrical Engineering & Electronics, Manchester, UK
Volume :
17
Issue :
22
fYear :
1981
Firstpage :
838
Lastpage :
839
Abstract :
With the aid of a high precision computer simulation we demonstrate that the frequently observed variation in DLTS peak height with emission rate window is not necessarily caused by nonexponential capacitance transients as is often supposed, but rather by the change in shape of the Debye tail with temperature. This variation in peak height is shown to be a function of temperature, reverse bias and trap depth.
Keywords :
Schottky-barrier diodes; deep level transient spectroscopy; deep levels; digital simulation; Debye tail; Schottky diodes; computer simulation; deep-level transient spectroscopy; emission rate window; nonexponential capacitance transients; peak heights;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810583
Filename :
4246064
Link To Document :
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