DocumentCode
974357
Title
Sidewall effects in shallow emitter of small bipolar transistor
Author
Eltoukhy, A.A. ; Roulston, D.J.
Author_Institution
University of Waterloo, Department of Electrical Engineering, Waterloo, Canada
Volume
17
Issue
22
fYear
1981
Firstpage
845
Lastpage
846
Abstract
The current injected into a shallow emitter is studied using a two-dimensional numerical solution of the transport equations, including the effects of bandgap reduction, lifetime and surface recombination velocity. The present results show clearly the correlation between the injected current and the bowl-shaped emitter area as well as the width of metal contact.
Keywords
bipolar transistors; semiconductor device models; bandgap reduction; bipolar transistor; lifetime; shallow emitter; sidewall effects; surface recombination velocity; transport equations; two-dimensional numerical solution;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810588
Filename
4246069
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