DocumentCode :
974512
Title :
Strained Si/SiGe Channel With Buried 
for Improved Drivability, Gate Stack Integrity and Noise Performance
Author :
Loh, Wei-Yip ; Zang, Hui ; Oh, Hoon-Jung ; Choi, Kyu-Jin ; Nguyen, Hoai Son ; Lo, Guo-Qiang ; Cho, Byung Jin
Author_Institution :
Inst. of Microelectron., Singapore
Volume :
54
Issue :
12
fYear :
2007
Firstpage :
3292
Lastpage :
3298
Abstract :
We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01 which can induce higher channel strain for the same Ge concentration. High-k dielectrics on Si/Si1-xGex. with buried Si0.99C0.01 show lower charge trapping, better leakage current distribution and less ftathand voltage shift. Si/Si1-xGex. channel p-MOSFET with the buried Si0.99C0.01 shows drive current improvement of up to 20% and better noise immunity.
Keywords :
Ge-Si alloys; MOSFET; elemental semiconductors; high-k dielectric thin films; silicon; silicon compounds; wide band gap semiconductors; MOSFET; Si-SiGe; SiC; charge trapping; current drivability; flatband voltage shift; gate stack integrity; high k dielectrics; leakage current distribution; noise performance; strained channel; Capacitive sensors; Dielectrics; Germanium silicon alloys; Laboratories; Lattices; MOSFET circuits; Microelectronics; Silicon carbide; Silicon germanium; Thermal stability; Carbon; MOSFETs; SiGe; field-effect transistor; heterostructure; mobility; silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2007.908599
Filename :
4383042
Link To Document :
