• DocumentCode
    974584
  • Title

    Effect of energy relaxation on injected current pulse in high-frequency IMPATT diodes

  • Author

    Lippens, Didier ; Constant, Eric

  • Author_Institution
    Université de Lille I, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
  • Volume
    17
  • Issue
    23
  • fYear
    1981
  • Firstpage
    878
  • Lastpage
    879
  • Abstract
    The effect of energy relaxation on carrier injection in millimetre-wave IMPATT diodes is considered. For this purpose, an approximate formula relating the current pulse injected in the transit region, including the energy relaxation, is derived. Its influence on the RF impedance of the impatt oscillator is discussed.
  • Keywords
    IMPATT diodes; carrier mobility; impact ionisation; IMPATT oscillator; RF impedance; carrier injection; energy relaxation; high-frequency IMPATT diodes; injected current pulse; microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810612
  • Filename
    4246094
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974584