Title :
Low voltage high performance E/D MOS logic
Author :
Choi, Dae Hyun ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
The letter describes a high performance MOS technology which produces both enhancement- and depletion-mode devices on the same substrate without using ion implantation. The enhancement mode devices, with 1¿2 ¿m channel lengths, can be realised using regular optical lithography and simple processing techniques.
Keywords :
field effect integrated circuits; integrated circuit technology; integrated logic circuits; 1 to 2 micron channel lengths; MOS logic; depletion-mode devices; enhancement mode devices; high performance MOS technology; low voltage high performance; optical lithography;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810613
