Title :
Effect of substrate orientation on electrical properties of LPE-grown InP
Author :
Akita, K. ; Yamaguchi, Akira ; Nakajima, Kensuke ; Takanohashi, T.
Author_Institution :
Fujitsu Laboratories Ltd., Kawasaki, Japan
Abstract :
The carrier concentrations of LPE-grown layers on (111)B substrates are about twice that of layers grown simultaneously on (100) substrates from the same solution. The analysis shows that the distribution coefficient for donor impurity is about 2.5 times larger in the case of (111)B face than that of (100) face.
Keywords :
III-V semiconductors; carrier density; doping profiles; electronic conduction in crystalline semiconductor thin films; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; In compounds; LPE-grown InP; carrier concentrations; donor impurity distribution coefficient; electrical properties; substrate orientation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810642
