Inverse-narrow-width effects and small-geometry MOSFET threshold voltage model

Author

Hsueh, Kelvin Kuey-Lung ; Sanchez, Julian J. ; DeMassa, Thomas A. ; Akers, Lex A.

Author_Institution

Center for Solid-State Electron. Res., Arizona State Univ., Tempe, AZ, USA

Volume

35

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

325

Lastpage

338

Abstract

An analytical threshold voltage model is developed based on the results from a three-dimensional MOSFET simulator, called MICROMOS. The model is derived by solving Poisson´s equation analytically and is used to predict the threshold voltage of MOSFETs with fully recessed oxide isolation (the trench structure). Coupling was observed between the short-channel effect and the inverse-narrow-width effect. The coupling results from the mutual modulation of the depletion depth and is used to extend the analytical inverse narrow-width model to small-geometry devices. The model is compared with experimental data obtained from the literature as well as with the three-dimensional simulator. Satisfactory agreement for channel length down to 1.5 μm and channel widths down to 1 μm has been obtained

Keywords

insulated gate field effect transistors; semiconductor device models; 1 micron; 1.5 micron; MICROMOS; Poisson´s equation; channel length; channel widths; depletion depth; fully recessed oxide isolation; inverse-narrow-width effect; short-channel effect; small-geometry MOSFET; three-dimensional MOSFET simulator; threshold voltage model; trench structure; Analytical models; Boundary conditions; Inverse problems; MOSFET circuits; Mutual coupling; Poisson equations; Predictive models; Solid state circuits; Subthreshold current; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2459

Filename

2459