DocumentCode
975001
Title
Erratum: Groove GaInAsP laser on semi-insulating InP
Author
Yu, K.L. ; Koren, U. ; Chen, Tiffani R. ; Yariv, Amnon
Volume
17
Issue
24
fYear
1981
Firstpage
936
Keywords
III-V semiconductors; gallium arsenide; indium compounds; laser modes; liquid phase epitaxial growth; semiconductor junction lasers; GaInAsP-InP injection laser; LPE growth process; groove laser diode; grooved substrate; index guided device; light-current characteristic; longitudinal mode; semi-insulating substrates; semiconductor lasers; threshold current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810652
Filename
4246135
Link To Document