Author :
Yu, K.L. ; Koren, U. ; Chen, Tiffani R. ; Yariv, Amnon
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; liquid phase epitaxial growth; semiconductor junction lasers; GaInAsP-InP injection laser; LPE growth process; groove laser diode; grooved substrate; index guided device; light-current characteristic; longitudinal mode; semi-insulating substrates; semiconductor lasers; threshold current;
