• DocumentCode
    975016
  • Title

    Erratum: Speed-power property of GaAs Schottky-barrier coupled Schottky-barrier gate FET logic

  • Author

    Tomizawa, Keiichi ; Hashizume, Nobuya ; Matsumoto, Kaname

  • Volume
    17
  • Issue
    24
  • fYear
    1981
  • Firstpage
    936
  • Keywords
    III-V semiconductors; Schottky effect; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated logic circuits; GaAs Schottky-barrier coupled Schottky-barrier gate FET logic inverter; computer simulation; small pulse voltage magnitude; speed-power property;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810653
  • Filename
    4246136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975016