Title :
Current drifting behaviour in InP MISFET with thermally oxidised InP/InP interface
Author :
Okamura, M. ; Kobayashi, Takehiko
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Inversion-mode InP MISFETs with a thermally oxidised InP/InP interface have been fabricated. The devices exhibit fairly stabilised drain-current/time characteristics compared with those of the conventional devices reported so far. The MIS interface properties are also discussed.
Keywords :
III-V semiconductors; indium compounds; insulated gate field effect transistors; III-V semiconductors; InP MISFET; current drifting behaviour; drain-current/time characteristics; interface properties; thermally oxidised InP/InP interface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810658
