• DocumentCode
    975074
  • Title

    Current drifting behaviour in InP MISFET with thermally oxidised InP/InP interface

  • Author

    Okamura, M. ; Kobayashi, Takehiko

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    25
  • fYear
    1981
  • Firstpage
    941
  • Lastpage
    942
  • Abstract
    Inversion-mode InP MISFETs with a thermally oxidised InP/InP interface have been fabricated. The devices exhibit fairly stabilised drain-current/time characteristics compared with those of the conventional devices reported so far. The MIS interface properties are also discussed.
  • Keywords
    III-V semiconductors; indium compounds; insulated gate field effect transistors; III-V semiconductors; InP MISFET; current drifting behaviour; drain-current/time characteristics; interface properties; thermally oxidised InP/InP interface;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810658
  • Filename
    4246142
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975074