Title :
GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide
Author :
Abe, Y. ; Kishino, Katsumi ; Suematsu, Yasuharu ; Arai, Shigehisa
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
A novel GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (BJB-DBR integrated laser for short) is proposed and demonstrated. In this structure, it is found theoretically that an efficient coupling of 98% between the active and butt-jointed external waveguides is available by matching the propagation constants and the field profiles of both waveguides, which gives relatively larger fabrication tolerance. Prototype BJB-DBR integrated lasers with emitting wavelength of 1.55 ¿m were fabricated, and single-longitudinal-mode operation was obtained at room temperature.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor junction lasers; GaInAsP/InP integrated laser; III-V semiconductors; butt-jointed built-in distributed-Bragg reflection waveguide; field profiles; propagation constants;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810661
