Title :
New percentage linearization measures of the degree of linearization of HPA nonlinearity
Author :
O´Droma, M. ; Mgebrishvili, N. ; Goacher, A.
Author_Institution :
Dept. of Electron. & Comput. Eng., Univ. of Limerick, Ireland
fDate :
4/1/2004 12:00:00 AM
Abstract :
A percentage linearization (PL) and a percentage linearization area (PLA) are defined and proposed as two new measures of the degree of AM-to-AM linearization, achieved by a linearization scheme, of the saturating region of nonlinear high power amplifiers (HPAs). The measures are based on defining a HPA saturation power point which is very close to the asymptotic output saturation power (AOSP) line. Here the point where the first derivative of the AM-to-AM dB power characteristic drops to 0.1 is so defined. Employing the passage through a typical pseudomorphic high electron mobility transistor solid-state power amplifier (PHEMT SSPA) of an UWC-136 8-PSK signal, as a test signal, an introductory insight into the usefulness of these linearization measures is presented.
Keywords :
HEMT integrated circuits; adjacent channel interference; amplitude modulation; linearisation techniques; phase shift keying; power amplifiers; PHEMT; UWC-136 8-PSK signal; adjacent channel interference; asymptotic output saturation power; degree of AM-to-AM linearization; error vector magnitude; nonlinear high power amplifier; percentage linearization area measure; phase shift keying; power characteristics; pseudomorphic high electron mobility transistor; saturation power point; solid-state power amplifier; Area measurement; Electron mobility; HEMTs; High power amplifiers; MODFETs; PHEMTs; Power measurement; Programmable logic arrays; Solid state circuits; Testing;
Journal_Title :
Communications Letters, IEEE
DOI :
10.1109/LCOMM.2004.823368