DocumentCode
975130
Title
Transition metal-doped zinc chalcogenides: spectroscopy and laser demonstration of a new class of gain media
Author
DeLoach, Laura D. ; Page, Ralph H. ; Wilke, Gary D. ; Payne, Stephen A. ; Krupke, Willliam F.
Author_Institution
Lawrence Livermore Nat. Lab., CA, USA
Volume
32
Issue
6
fYear
1996
fDate
6/1/1996 12:00:00 AM
Firstpage
885
Lastpage
895
Abstract
The absorption and emission properties of transition metal (TM)-doped zinc chalcogenides have been investigated to understand their potential application as room-temperature, mid-infrared tunable laser media. Crystals of ZnS, ZnSe, and ZnTe, individually doped with Cr2+, Co2+, Ni2+, or Fe2+ have been evaluated. The absorption and emission properties are presented and discussed in terms of the energy levels from which they arise. The absorption spectra of the crystals studied exhibit strong bands between 1.4 and 2.0 μm which overlap with the output of strained-layer InGaAs diodes. The room-temperature emission spectra reveal wide-band emissions from 2-3 μm for Cr and from 2.8-4.0 μm for Co, Cr luminesces strongly at room temperature; Co exhibits significant losses from nonradiative decay at temperatures above 200 K, and Ni and Fe only luminesce at low temperatures, Cr2+ is estimated to have the highest quantum yield at room temperature among the media investigated with values of ~75-100%. Laser demonstrations of Cr:ZnS and Cr:ZnSe have been performed in a laser-pumped laser cavity with a Co:MgF2 pump laser. The output of both lasers were determined to peak at wavelengths near 2.35 μm, and both lasers demonstrated a maximum slope efficiency of approximately 20%. Based on these initial results, the Cr2+ ion is predicted to be a highly favorable laser ion for the mid-IR when doped into the zinc chalcogenides; Co2+ may also serve usefully, but laser demonstrations yet remain to be performed
Keywords
II-VI semiconductors; infrared spectra; laser cavity resonators; laser transitions; laser tuning; optical losses; photoluminescence; radiative lifetimes; semiconductor lasers; zinc compounds; 1.4 to 2 mum; 2 to 3 mum; 2.8 to 4 mum; 20 percent; 298 K; Co:MgF2 pump laser; ZnS; ZnSe; ZnTe; absorption properties; emission properties; energy levels; gain media; laser-pumped laser cavity; losses; mid-infrared tunable laser media; nonradiative decay; room-temperature emission spectra; slope efficiency; wide-band emissions; zinc chalcogenides; Absorption; Chromium; Crystals; Iron; Laser transitions; Pump lasers; Spectroscopy; Temperature; Tunable circuits and devices; Zinc compounds;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.502365
Filename
502365
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