Title :
Low threshold 1.55 ¿m InGaAsP lasers double clad with InGaAsP confining layers
Author :
Westbrook, L.D. ; Nelson, A.W. ; Hatch, C.B.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Preliminary results for 1.55 ¿m InGaAsP double-heterostructure lasers with symmetrical InGaAsP confining layers are presented. The lowest broad-area threshold is 1.36 kA/cm2, which is 30% lower than the best value previously reported for 1.55 ¿m lasers. This improvement is believed to be related to the absence of terracing on InGaAsP confining layers.
Keywords :
III-V semiconductors; claddings; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; InGaAsP confining layers; InGaAsP lasers; broad-area threshold; double clad;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810666
