• DocumentCode
    975161
  • Title

    Low threshold 1.55 ¿m InGaAsP lasers double clad with InGaAsP confining layers

  • Author

    Westbrook, L.D. ; Nelson, A.W. ; Hatch, C.B.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    17
  • Issue
    25
  • fYear
    1981
  • Firstpage
    952
  • Lastpage
    954
  • Abstract
    Preliminary results for 1.55 ¿m InGaAsP double-heterostructure lasers with symmetrical InGaAsP confining layers are presented. The lowest broad-area threshold is 1.36 kA/cm2, which is 30% lower than the best value previously reported for 1.55 ¿m lasers. This improvement is believed to be related to the absence of terracing on InGaAsP confining layers.
  • Keywords
    III-V semiconductors; claddings; gallium arsenide; indium compounds; semiconductor junction lasers; III-V semiconductors; InGaAsP confining layers; InGaAsP lasers; broad-area threshold; double clad;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810666
  • Filename
    4246150
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975161