Current dependence of temperature rise in CW operated GaInAsP/InP DH laser diodes

The current dependence of the temperature rise in CW double-heterostructure GaInAsP/InP lasers has been measured. The experimental data have been compared with values calculated assuming multiple heat sources and a quadratic dependence of the nonradiative component of injected current on the radiative component. The experimental data agree reasonably well with the theory and indicate that most of the heating is due to nonradiative recombination.