• DocumentCode
    975191
  • Title

    Current dependence of temperature rise in CW operated GaInAsP/InP DH laser diodes

  • Author

    Brosson, P. ; Thompson, G.H.B.

  • Author_Institution
    Standard Telecommunication Laboratories Limited, Harlow, UK
  • Volume
    17
  • Issue
    25
  • fYear
    1981
  • Firstpage
    957
  • Lastpage
    958
  • Abstract
    The current dependence of the temperature rise in CW double-heterostructure GaInAsP/InP lasers has been measured. The experimental data have been compared with values calculated assuming multiple heat sources and a quadratic dependence of the nonradiative component of injected current on the radiative component. The experimental data agree reasonably well with the theory and indicate that most of the heating is due to nonradiative recombination.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; CW operated GaInAsP/InP DH laser diodes; III-V semiconductors; current dependence; multiple heat sources; nonradiative recombination; temperature rise;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810669
  • Filename
    4246153
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975191